Ti0.5Al0.5O-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition-Reference-Cited by-同舟云学术

Ti0.5Al0.5O-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition

Published:2016 Issue:12 Volume:5 Page:Q284-Q288
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lee Ching-Sung,Hsu Wei-Chou,Liu Han-Yi,Chiang Bo-Jung

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference29 articles.

1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

2. A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

3. Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

4. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

5. AlGaN/GaN MOSHEMT With High-Quality $\hbox{Gate}$–$\hbox{SiO}_{2}$ Achieved by Room-Temperature Radio Frequency Magnetron Sputtering

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1. Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel;IEEE Journal of the Electron Devices Society;2020

2. Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs;IEEE Journal of the Electron Devices Society;2019

3. Comparative Study on Graded-Barrier AlxGa1−xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique;Semiconductor Science and Technology;2018-04-26

4. Al2O3-Dielectric In0.18Al0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure;IEEE Journal of the Electron Devices Society;2018

5. Al2O3-Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al2O3/TiO2 Passivation Oxides;IEEE Journal of the Electron Devices Society;2018