An Analytical Approach for Current Modeling in a Single Electron Transistor (SET) Utilizing Graphene Nanoscroll (GNS) as the Island
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/abae15/pdf
Reference24 articles.
1. Nanowire transistors made easy
2. Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
3. A Theoretical Study on Charge Transfer of Twisted T-Graphene Nanoribbon Surface
4. Modeling a Double-Halo-Doping Carbon Nanotube FET in DC and AC Operations
5. A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances
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1. Investigation on characteristics of Monte Carlo model of single electron transistor using Orthodox theory;Sustainable Energy Technologies and Assessments;2021-12
2. The current analysis of a single electron transistor based on double graphene nanoscroll island;Solid State Communications;2021-03
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