Abstract
This article discusses the power consumption trends of two geometries of CNT bundle interconnects for VLSI applications. The electrostatic and electro-thermal field simulations of square and triangular CNT bundle interconnects are done. Two factors viz. power dissipated and peak temperature are extracted and a new figure of merit called power temperature product (PTP) is defined. The PTP is calculated for interconnect lengths ranging from 500 μm to 2000μm. Results show that both triangular as well as square CNT bundles have high power withstanding capacity. Triangular CNT bundles have higher PTP when the associate phase changes are ignored.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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