The Response of Phonon Frequencies, Sound Velocity, Electronic, Optical, and Mechanical Properties of Indium (Phosphide, Arsenide, and Antimonide) to Hydrostatic Pressure

Abstract

The pressure dependence of phonon vibrations, the velocity of sound, and some other related physical quantities of InAs , InP , and InSb semiconductors have been determined. This investigation is done using the empirical pseudopotential method. We proposed a pressure dependence of the pseudopotential form factors; hence we were able to calculate the pressure dependence of the fundamental energy gaps. Using the values of the fundamental band gaps, we were able to calculate the refractive index, static dielectric constant, high-frequency dielectric constant, longitudinal and transverse phonon frequencies, elastic constants, mechanical moduli, and velocity of sound. Our findings may serve as a reference for experimental work at high pressures.