Abstract
This search displays the effects of deposition temperature on the physical properties of MgO-SiO2 thin films. These thin films were deposited on glass substrates using the autoclave method (within 120min) and at temperature deposition range of within a deposition temperature range of 150 °C–300 °C. These films were diagnosed using X-ray diffraction (XRD) and scanning electronic microscopy (SEM) and UV–Vis spectrophotometer for structural, morphological and optical analysis respectively. Using energy dispersive spectroscopy (EDX), the compositional characterization analysis of the MgO-SiO2 films was also carried out. The XRD patterns reveal that the MgO-SiO2 films have a cubic and hexagonal phase polycrystalline composition with the preferential growth direction of (0 0 2) and (0 1 1) respectively. Granular size was found to decrease by increasing the deposition temperature except at 200 °C, The crystal and optical parameters are calculated and discussed in detail. Membranes were found to have an absorption coefficient below (104 Cm−1) which means indirect permissible and forbidden electronic transitions. The SEM observations show that the films have homogeneous surfaces with clear fullness, The experimental results reveal that MgO-SiO2 thin films may be used as an alternative material for environmentally friendly buffer layer.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
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