Abstract
We employ quaternary graded AlInGaN layers numerically in the active region to study the effect on the optoelectronic properties of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). We evaluated the device performance by analyzing carriers concentrations, carrier flux, radiative recombination rate, energy band diagrams and internal quantum efficiency (IQE). We compare the results with the reference device structure and found that the device with quaternary graded AlInGaN layers has high peak efficiency as well as low efficiency droop.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献