Phase Change Behavior and Multi-Level Storage for V2O5 Thin Film in Phase-Change Memory Application
Author:
Funder
National Natural Science Foundation of China
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/abadeb/pdf
Reference29 articles.
1. Thermal stability of phase change GaSb\GeTe, SnSe\GeTe and GaSb\SnSe double stacked films revealed by X-ray reflectometry and X-ray diffraction
2. Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
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1. C/Sb2Te3 phase-change heterostructure films with low resistance drift for multilevel phase change memories;Journal of Alloys and Compounds;2023-05
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3. Optical Properties of V2O5 Thin Films on Different Substrates and Femtosecond Laser-Induced Phase Transition Studied by Pump–Probe Method;Nanomaterials;2022-01-21
4. Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films;CrystEngComm;2022
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