Simulation of the Pressure Bonding Process Using the Phase-field Crystal Method

Abstract

The present study simulated the pressure bonding process by the phase-field crystal method for a two-dimensional system. Two crystals with different orientations and sinusoidal surfaces were placed relative to each other, and their uppermost and lowermost layers were gradually approached as chuck regions. The dependencies of the atomic structure and energy of the system on the relative position of the sinusoidal surface, relative azimuth angle of the two crystals and the moving velocity of the chuck (V), were investigated. The voids at the interface remained when V was slow, suggesting that there was an upper limit to the chuck moving velocity to obtain a good bonding state. This would be the optimum value of the chuck moving velocity from an engineering viewpoint. The relative position of the upper and lower crystals had no significant effects on the atomic structure and energy of the system, while the relative azimuth angle between the crystals had a crucial effect on the change in the atomic structure and energy of the system, i.e., a smaller orientational difference was necessary for good bonding.