Dielectric Relaxation and AC Conductivity of Fe-Doped Glassy Semiconductors: Role of Fe Doping on Relaxation Time

Abstract

AC conductivity and dielectric parameters are supposed to be two noticeable parameters that ensure the applicability of present samples for electronic and other applications. Presently, Fe-doped glassy semiconductors were developed by melt-quenching route and characterized using FT-IR, SEM, EDAX and decoupling index for structural, morphological and elemental examinations. Frequency dependent dielectric constant, AC conductivity, dielectric loss at different temperatures have been explored in a wide frequency and temperatures ranges. Electric modulus formalism has been conceived asit can exclude the electrode polarization effect at low frequency regime and suggest the transition from long-range mobility to short-range mobility assembly of polarons. It is also noteworthy that relaxation times are found to decrease with temperatures, which may indicate about the faster movement of charge carriers. The variation of KWW parameters directly indicate that after doping of Fe content into the resultant materials, the relaxation process is shifted from Non-Debye to Debye type up to a limit. By crossing the limiting value of composition (x = 0.3), it becomes Non-Debye type in a very slow rate. The present system also exhibits a small relaxation time in comparison with others’ works. Lower values of dielectric constant at high frequencies are expected to be important for their applications in photonics and opto-electronics. Scaling method of electric modulus spectra indicate that the dielectric relaxation process in the present system leads to a common relaxation process at various temperatures, but it is strongly dependent on compositions.