HfO2-based Ferroelectric Field-Effect-Transistor with Large Memory Window and Good Synaptic Behavior
Author:
Funder
Academy of Integrated Circuit Innovation
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac08dd/pdf
Reference33 articles.
1. Memory leads the way to better computing
2. The future of electronics based on memristive systems
3. Neuromorphic computing with multi-memristive synapses
4. Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures
5. Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics
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