Communication—Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide

Abstract

Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The period length of the pore diameter variation could be estimated to be about 20 nm. Additionally, it was observed that the assembly of the pores in a top down view is a Turing pattern.