Zn2SnO4 Thin Film for Ozone Gas Sensor Developed on MEMS Device and Synthesized by HiPIMS Co-sputtering

Abstract

The sensing film of Zn2SnO4 is developed and synthesized by High Power Impulse Magnetron Sputtering (HiPIMS) co-sputtering system which is integrated on the Microelectromechanical Systems (MEMS) gas sensor. The experimental results revealed that the optimal annealing temperature is at 600 °C and optimal operating temperature is at 100 °C which has the best sensing performance for Ozone sensing. It is found that 0.3 ppm of O3 gas concentration gas the response value (Ra/Rg) 39.03 and at 0.05 ppm of low concentration, the sensing response recorded to be 8.03. In the selectivity test, with 5 other gases like CO, NO2, C3H4O3, C2H5OH and H2S, sensor exhibited high selectivity for O3 gas. The Zn2SnO4 sensing film have quickly responded to O3 gas with 6 s response time and the 18 s recovery time. In the current study, the Zn2SnO4 film in MEMS gas sensor shown good detection performance at low gas concentrations and has potential applications in environmental sensing.