Effect of Film Density on MgSiO3-Based Resistive Random-Access Memory

Abstract

Different film density MgSiO3 based resistive random-access memorys (RRAMs) are fabricated to investigate the resistive switching behaviors. The X-ray diffraction results, set voltage, reset voltage, cycling endurance, and retention time are drawn for comparison. With the increasing oxygen ratio gas flow, the resistive switching characteristics of MgSiO3 RRAM are drastically elevated by changing the fabrication conditions of the RS layer. Moreover, we portray a filament model to explain the most likely mechanism associated with the generation and rupture of conductive filaments composed of oxygen vacancies. The high randomness among switching cycles for memory application should be prevented, but it is suitable for the physical unclonable function. The relationship between HRS and the next time set voltage shows a strong correlation, and the conduction mechanisms of the low-resistance state (LRS) and HRS correspond to ohmic conduction and space charge-limited conduction, respectively. Meanwhile, the RRAM undergoes 10,000 s retention tests, and the two resistance states can be distinguished without obvious alternation or degradation. A favorable cycling endurance and retention time achieved by optimizing the fabrication parameters of Cu/MgSiO3/Pt RRAM have the potential for nonvolatile memristors and information security applications.