Engineering of NiO/ZnO Core-Shell Nanostructure via Facile Chemical Processes for Environmental Application

Author:

Gomaa M.M.ORCID,Sayed M.H.ORCID,Boshta M.

Abstract

NiO/ZnO core–shell nanoflakes structures were successfully fabricated using a unique strategy consisting of a simple chemical bath deposition (CBD) route followed by a metal-organic chemical vapor deposition (MOCVD) technique with different growth times. The XRD results combined with Raman measurements and X-ray photoelectron spectroscopy confirmed that the surface property and photocatalytic activity of NiO/ZnO core–shell nanostructures affected by varying the growth time of ZnO on the surface of NiO nanoflakes. The Scanning electron microscopy images exhibited that the NiO/ZnO samples have a porous core–shell architecture with high surface area and abundant open sites, resulting in enhanced photocatalytic activity. The photocatalytic activity was tested for the prepared samples by measuring the degradation of crystal violet (CV) dye under ultraviolet irradiation. NiO/ZnO core–shell nanostructures deposited at 30 min exhibits higher photodegradation efficiency toward CV dye compared to NiO/ZnO core–shell deposited at 60 min and NiO nanoflakes standing alone. The enhanced photocatalytic activity is due to the formation of p–n heterojunction between ZnO and NiO with a high specific area and more active site of core–shell nanoflakes architecture. The obtained results in this research suggest a new strategy for the fabrication of highly efficient photocatalytic activity semiconducting metal oxide with core–shell.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3