Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Abstract

This paper presents the GaN GAA nanowire FET analysis with high K dielectric. The new phase in the development of power semiconductor devices has begun with the introduction of the outstanding benefits of employing wide bandgap semiconductors like gallium nitride (GaN) in the development of sophisticated devices. This work has been carried out to evaluate drain current, electric field, electric potential, and transconductance with SiO2 and HfO2 as dielectric. There are several advantages of switching from silicon-based circuits to GaN-based ones The drain current analysis shows that the device with HfO2 gate dielectric has a higher ON/OFF ratio compared to the device with SiO2 gate dielectric. The transconductance analysis also shows that the device with HfO2 gate dielectric has a higher transconductance value of approximately 9.88 S compared to the device with SiO2 gate dielectric.