Abstract
The simultaneous switching noise (SSN) effects in graphene nanoribbon field effect transistor (GNRFET) based ternary circuits are presented in this study. The performance in terms of SSN induced peak noise and propagation delay on power and ground rails are investigated in multilayer graphene nanoribbon (MLGNR) bundled power interconnects using Hewlett simulation program with integrated circuit emphasis (HSPICE) simulator. Furthermore, these investigations are compared to the copper (Cu) and multiwalled carbon nanotubes (MWCNT) based power interconnects. From the results, it is noticed that the proposed MLGNR interconnects shows performance improvements up to 74.9% and 33.8% over the Cu and MWCNT interconnects. Moreover, the SSN peak noise and delay are investigated for different interconnect lengths from 200 μm to 500 μm. It is observed that the SSN noise on power and ground rail is reduced and propagation delay is increased as interconnect length is increased.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials