Author:
Adkisson James,Khater Marwan,Gambino Jeff,Cheng Peng,Jain Vibhor,Camillo-Castillo Renata,Lavoie Christian,Sutton Akil,Gluschenkov Oleg,Liu Q.Z.,McDevitt Tom,Engelmann Sebastian,Pekarik Jack,Harame D. L.
Abstract
We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (fMAX).
Publisher
The Electrochemical Society
Cited by
2 articles.
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