Dopant Activation, Carrier Mobility, and TEM Studies in Polycrystalline Silicon Films-Reference-Cited by-同舟云学术

Dopant Activation, Carrier Mobility, and TEM Studies in Polycrystalline Silicon Films

Published:1990-03-01 Issue:3 Volume:137 Page:967-971
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Queirolo G.¹²,Servida E.¹²,Baldi L.¹²,Pignatel G.¹²,Armigliato A.¹²,Frabboni S.¹²,Corticelli F.¹²

Affiliation:

1. SGS‐Thomson Microelectronics, I‐20041 Agrate Brianza, Italy

2. CNR—Laboratorio LAMEL, I‐40100 Bologna, Italy

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086588/pdf

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