Improvement of Reliability for Polycrystalline Thin-Film Transistors Using Self-Aligned Fluorinated Silica Glass Spacers-Reference-Cited by-同舟云学术

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Improvement of Reliability for Polycrystalline Thin-Film Transistors Using Self-Aligned Fluorinated Silica Glass Spacers

Published:2005 Issue:8 Volume:8 Page:G209
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Tu Chun-Hao,Chang Ting-Chang,Liu Po-Tsun,Zan Hsiao-Wen,Tai Ya-Hsiang,Feng Li-Wei,Wu Yung-Chun,Chang Chun-Yen

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference12 articles.

1. Polycrystalline silicon thin film transistors

2. Characteristics of offset-structure polycrystalline-silicon thin-film transistors

3. Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors

4. Thin fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2011-04

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