The Use of Dopants for Defect Monitoring for Silicon-Germanium Ultra-High Vaccuum Chemical Vapor Deposition
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Published:2014-08-12
Issue:6
Volume:64
Page:441-454
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Hazbun Ramsey,Hart John,Nakos James,Siegel Dean,Funch Christopher,Kaushal Vikas,Hazel David Scott,Kolodzey James
Abstract
Silicon-germanium epitaxy via ultra high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. Two different defect etches were performed, and the defect densities counted and confirmed as originating from the substrate-epitaxy interface. The defect densities were correlated to the concentration of interfacial oxygen. The result of this study is a suggestion for a defect monitoring technique that uses already commonplace equipment and chemicals, which has a rapid turnaround, with controllable sensitivity to substrate surface contaminants.
Publisher
The Electrochemical Society
Cited by
2 articles.
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