Formation of CuIn(1-x)GaxSe2(CIGS) by Electrochemical Atomic Layer Deposition (ALD)-Reference-Cited by-同舟云学术

Formation of CuIn(1-x)GaxSe2(CIGS) by Electrochemical Atomic Layer Deposition (ALD)

Published:2014 Issue:4 Volume:161 Page:D141-D146
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Banga Dhego,Perdue Brian,Stickney John

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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