(Invited) Silicon Emission Mechanism for Oxidation Process of Non-Planar Silicon
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Published:2016-08-19
Issue:5
Volume:75
Page:215-226
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Kageshima Hiroyuki,Shiraishi Kenji,Endoh Tetsuo
Abstract
The advance in the understanding of the mechanism of the silicon oxidation process toward the fine control of 3D MOSFETs is explained. The silicon emission mechanism can be applied to the oxidation process of silicon pillars as well as that of planar silicon. Since the geometrical effect is inevitable for the 3D MOSFETs, the silicon emission mechanism is the key to achieve high-performance non-planar 3D MOSFETs.
Publisher
The Electrochemical Society