Author:
Van Elshocht S.,Lehnen P.,Seitzinger B.,Abrutis A.,Adelmann C.,Brijs B.,Caymax M.,Conard T.,De Gendt S.,Franquet A.,Lohe C.,Lukosius M.,Moussa A.,Richard O.,Williams P.,Witters T.,Zimmerman P.,Heyns M.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. High-κ gate dielectrics: Current status and materials properties considerations
3. M. Aoulaiche, M. Houssa, T. Conard, G. Groeseneken, S. De Gendt, and M. M. Heyns , inProceedings of the International Reliability Physics Symposium, IEEE, p. 317 (2006).
4. Preparation and characterization of rare earth scandates as alternative gate oxide materials
5. Ternary rare-earth metal oxide high-k layers on silicon oxide
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