Anisotropic Reactive Ion Etching of MoSi2 and In Situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3-Reference-Cited by-同舟云学术

Anisotropic Reactive Ion Etching of MoSi2 and In Situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3

Published:1988-09-01 Issue:9 Volume:135 Page:2373-2378
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Mele T. C.¹,Arney S. C.¹,Krusius J. P.¹,MacDonald N. C.¹

Affiliation:

1. School of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2096274/pdf

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