Aluminum Nitride Containers for the Synthesis of GaAs-Reference-Cited by-同舟云学术

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Aluminum Nitride Containers for the Synthesis of GaAs

Published:1962 Issue:12 Volume:109 Page:1176
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Long G.,Foster L. M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics;Journal of Materials Science;2011-12-08

2. Nitrides;Kirk-Othmer Encyclopedia of Chemical Technology;2005-10-14

3. Effects of crucible material on undoped LEC GaAs crystals;Journal of Crystal Growth;1987-08

4. Preparation of AIN Coatings on Mo by RF‐Reactive Ion Plating: The Deposition Mechanism;Journal of The Electrochemical Society;1981-07-01

5. Aluminium nitride probes for application in iron melts;Archiv für das Eisenhüttenwesen;1981-03

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