Photocapacitive Determination of Spatial Distribution of Deep Levels at Si / SiO2 Interfaces-Reference-Cited by-同舟云学术

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Photocapacitive Determination of Spatial Distribution of Deep Levels at Si / SiO2 Interfaces

Published:1999-08-01 Issue:8 Volume:146 Page:3105-3109
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishizawa Jun‐ichi¹²,Murai Akihiko¹²,Oyama Yutaka²³

Affiliation:

1. Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan

2. Telecommunications Advancement Organization of Japan, Sendai Research Center, 19 Koeji Aza Nagamachi Aoba, Sendai 980-0868, Japan

3. Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, 02 Aoba Aza Aramaki Aoba, Sendai 980-8579, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392438/pdf

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