Study of Drain Induced Barrier Lowering (DIBL), Threshold Voltage Roll-Off (ΔVtroll-off) and Drain Current in Carbon Nanotube Field-Effect Transistor (CNTFET)-Reference-Cited by-同舟云学术

Study of Drain Induced Barrier Lowering (DIBL), Threshold Voltage Roll-Off (ΔVtroll-off) and Drain Current in Carbon Nanotube Field-Effect Transistor (CNTFET)

Published:2015 Issue:9 Volume:4 Page:M69-M72
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Singh Ajay Kumar,Kumar B. Naresh,Prabhu C. M. R.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A Circuit-Compatible Model of Ballistic Carbon Nanotube Field-Effect Transistors

2. Comparative study of leakage power in CNTFET over MOSFET device

3. Comparative study of leakage power in CNTFET over MOSFET device

4. Modeling and analysis of circuit performance of ballistic CNFET

5. CNTFET basics and simulation

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