Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors-Reference-Cited by-同舟云学术

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Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors

Published:1988-01-01 Issue:1 Volume:135 Page:150-155
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Miyai Yukio¹,Yoneda Kenji¹,Oishi Hiroshi¹,Uchida Hirofumi¹,Inoue Morio¹

Affiliation:

1. Matsushita Electronics Corporation, Kyoto Research Laboratory, Minami‐ku, Kyoto 601, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2095542/pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroelectrochemistry of conducting polymers;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

2. Anisotropic reactive ion etching in silicon, using a graphite electrode;Sensors and Actuators A: Physical;1998-03

3. Deep trench etching in silicon with fluorine containing plasmas;Applied Surface Science;1996-07

4. Rapid Thermal Oxidation of Lightly Doped Silicon in N2O;MRS Proceedings;1994

5. Characterization of Thin SiO2 Grown by Rapid Thermal Processing as Influenced by Processing Parameters;Journal of The Electrochemical Society;1993-03-01

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