Multiple Source Quantum Well Model of Porous Silicon Light Emission-Reference-Cited by-同舟云学术

Multiple Source Quantum Well Model of Porous Silicon Light Emission

Published:1996-04-01 Issue:4 Volume:143 Page:1394-1398
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Zhang S. L.¹²,Chen Y.³,Jia L.¹,Li J. J.³,Huang F. M.¹,Zhu T.³,Wang X.¹,Liu Z. F.³,Cai S. M.³,Wong S. P.¹³²⁴,Wilson I. H.¹³²⁴

Affiliation:

1. Department of Physics, Peking University, Beijing 100871, China

2. The National Laboratory on Surface Physics, Fudan University, Shanghai 200413, China

3. College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

4. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin NT, Hong Kong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836649/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ photoluminescence characterization of porous silicon formation;Thin Solid Films;1999-03

2. Photoluminescence of ozone oxidized and HF etched porous silicon and the multiple source quantum well model;Applied Physics Letters;1997-09-08

3. Using Porous Silicon as a Hydrogenating Agent: Derivatization of the Surface of Luminescent Nanocrystalline Silicon with Benzoquinone;Journal of the American Chemical Society;1997-07-01

4. Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−‐type porous silicon;Applied Physics Letters;1996-11-25