Author:
Masaoka Hiroyuki,Saito Takeyasu,Kondo K.,Okamoto Naoki,Kan Tomoatsu
Abstract
Titanium carbide (TiC) films were deposited by a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) using a gas mixtures of TiCl4, H2, CH4, and C2H2. Substrate temperature and C/Ti ratio dependencies were investigated. TiC thin film with CH4 exhibited higher hardness (1150 Hv) than the one with C2H2 under the experimental conditions studied in this study. The compositional controllability to adjust C/Ti = 1 was easier in the case of CH4 than the case with C2H2.
Publisher
The Electrochemical Society
Cited by
2 articles.
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