High Mobility SiGe Channel NonPlanar Devices

Abstract

We report on the promise of using SiGe channel FinFETs for high performance CMOS for the sub-22nm node. Devices with Si, stacked SiGe/Si, shell/core SiGe/Si and homogeneous SiGe fins with (110) and (100) surface orientations were fabricated and characterized. The stacked SiGe/Si fin device exhibited a dual turn-on due to the SiGe and Si regions. The shell/core SiGe/Si fin device mobility was 30% greater than the Si fin. The homogeneous SiGe fin device with a (110) orientation had a mobility 3.6X higher than the Si fin device with a (100) orientation.