1. D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz, L. Su, S. Luce, and J. Slattery ,Tech. Dig. Int. Electron Devices Meet., 1997, p. 773.
2. Contact and via structures with copper interconnects fabricated using dual Damascene technology
3. Real Time Observation by Atomic Force Microscopy of Spontaneous Recrystallization at Room Temperature in Electrodeposited Copper Metallization
4. S. Ahmed, D. N. Buckley, A. Arshak, A. M. O’Connell, and L. D. Burke , inProceedings of the Symposium on Thin Film Materials, Processes and Reliability, PV 2003-13, p. 110, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).