Residue-Free Dry Etching of Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication
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Published:2013-03-15
Issue:12
Volume:50
Page:435-440
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Takagahara Kazuhiko,Ono Kazuyoshi,Kuwabara Kei,Sakata Tomomi,Ishii Hiromu,Sato Yasuhiro,Jin Yoshito
Abstract
Residue-free dry etching of a photosensitive-polymer sacrificial layer using O2/CF4/CO-plasma exposure is described for the fabrication of microelectromechanical-system (MEMS) devices. Energy dispersive X-ray spectroscopy reveals that O2/CF4/CO-plasma exposure removes polymer sacrificial layers without leaving residue and severely damaging Au structures. Since the O2/CF4/CO-plasma exposure hardly damages Au structures, this process is applicable for the removal of sacrificial layers for MEMS with Au structures.
Publisher
The Electrochemical Society