(Gordon E. Moore Award Presentation) Sensors Using AlGaN/GaN Based High Electron Mobility Transistor for Environmental and Bio-Applications

Author:

Ren Fan,Pearton S. J.

Abstract

AlGaN/GaN high electron mobility transistor (HEMT) based sensors have been developed to analyze a wide variety of gases and biological agents for biomedical applications. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. Examples of detecting breath cancer marker, carbon monoxide carbon dioxide, kidney injury molecule, and botulinum toxin are discussed in this paper.

Publisher

The Electrochemical Society

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