(Invited) Strained Si:C Using ClusterCarbon Implant

Abstract

We discuss the use of ClusterCarbon implant to obtain Si:C stressor layers for strain engineering applications in advanced technology nodes. ClusterCarbon implant with its self-amorphizing capability is exploited to achieve both an abrupt and shallow junction for Phos profiles. Various carbon implant conditions are being experimented for a given phosphorus implant dose under flash and spike anneal conditions. We discuss the results to address the trade-off between phosphorus activation and carbon substitution along with the junction depth and abruptness. An optimum anneal and carbon implant condition is required to achieve higher carbon substitution along with a reasonably low sheet resistance value.