Abstract
This review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a brief sketch of the integration efforts will be presented.
Publisher
The Electrochemical Society
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献