Effects of Hydrogen Implantation on the Structural and Electrical Properties of Nickel Silicide-Reference-Cited by-同舟云学术

Effects of Hydrogen Implantation on the Structural and Electrical Properties of Nickel Silicide

Published:2002 Issue:9 Volume:149 Page:G517
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Choi Chel-Jong,Ok Young-Woo,Hullavarad Shiva S.,Seong Tae-Yeon,Lee Key-Min,Lee Joo-Hyoung,Park Young-Jin

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

2. Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

3. M. A. Nicolet and S. S. Lau, inVLSI Electronics Microstructure Science, N. G. Einspruch and G. B. Larrabee, Editor, p. 329, Academic, New York (1983).

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