Fabrication and Characterization of GaN-Based Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference24 articles.
1. High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications
2. GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication
3. High-Speed Light-Emitting Diodes Emitting at 500 nm With 463-MHz Modulation Bandwidth
4. Light extraction enhancement of InGaN MQW by reducing total internal reflection through surface plasmon effect
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