(Invited) ALD and Pulsed-CVD of Ru, RuO2, and SrRuO3

Abstract

Atomic layer deposition (ALD) and pulsed chemical vapor deposition (p-CVD) of Ru-based films, such as Ru, RuO2, and SrRuO3, were examined for their application to advanced dynamic random access memory capacitor with a design rule of < 20 nm. Growth characteristics and film properties of Ru grown by ALD and p-CVD using (DMPD)(EtCp)Ru and RuO4, respectively, were comparatively examined. Furthermore, deposition of RuO2 and SrRuO3 electrodes was explored by p-CVD and combined ALD/CVD processes using RuO4 and Sr(iPr3Cp)2 as Ru and Sr precursors, respectively. The leakage current density and equivalent oxide thickness of metal-insulator-metal capacitor, where Ru based electrodes and higher-k dielectrics were adopted, were also studied.