Trap Densities in ZnO TFTs with SiNx/SiOx Stacked Gate Insulators Fabricated Using Several N2O Flow Rate during SiOx Deposition

Abstract

The trap densities (D t) in ZnO thin-film transistors (TFTs) with SiNx / SiOx stacked gate insulators fabricated using several N2O flow rate during SiOx deposition (R N2O) are extracted. It is found that the trap states consist of deep flat states and shallow tail states. The deep states are similar, whereas the tail states vary as R N2O varies. It is also found that the degree of the characteristic stability corresponds to D t of the tail states.