Optical Properties for Antireflection Coating of TiAlN Thin Films for Semiconductor Photo Detectors

Abstract

Titanium aluminum nitride thin film by DC magnetron sputtering was deposited on Si substrate. The thickness variation of titanium aluminum nitride for different Nitrogen and Argon gas composition at different wavelength in the range of 200 to 2500 nm is investigated using reflection spectroscopy. The morphology of titanium aluminum nitride films is characterized using atomic force microscopy AFM. Experimental results show that increasing the nitrogen gas in the mixture makes the film thicker and less reflective.