1. Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma
2. B. K. Hwang, M. J. Loboda, G. A. Cerny, R. F. Schneider, and J. S. Seifferly, inLow and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues, M. J. Loboda, R. Singh, S. S. Ang, and H. S. Rathore, Editors, PV 2000-5, p. 63, The Electrochemical Society Proceedings Series, Pennington, NJ (2000).
3. R. D. Goldblatt, B. Agarwala, M. B. Anand, E. P. Barth, G. A. Biery, Z. G. Chen, S. Cohen, J. B. Connolly, A. Cowley, T. Dalton, S. K. Das, C. R. Davis, A. Deutsch, C. DeWan, D. C. Edelstein, P. A. Emmi, C. G. Faltermeriei, J. A. Fitzsmmons, J. Hedrick, C. K. Hu, J. P. Hummel, P. Jones, E. Kaltalioglu, B. E. Kastenmeier, M. Krishnan, W. F. Landers, E. Liniger, J. Liu, N. E. Lustig, S. Malhotra, D. K. Manger, V. McGahay, R. Mih, H. A. Hye, S. Purushothaman, H. A. Tathore, S. C. Seo, T. M. Shaw, A. H. Simon, T. A. Spooner, M. Stetter, R. A. Wachnik, and J. G. Ryan, inProceedings of International Interconnect Technology Conference 2000, p. 261, IEEE (2000).
4. Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
5. A. Grill, D. Edelstein, and V. Patel, inProceedings of Advanced Metallization Conference 2001, A. J. McKerrow, Y. Shacham-Diamand, S. Zaima, and T. Ohba, Editors, p. 253, Materials Research Society, Warrendale, PA (2001).