Author:
Lo Chien-Fong,Liu Lu,Kang Tsung-Sheng,Davies Ryan,Gila Brent P.,Pearton S. J.,Kravchenko I. I.,Laboutin Oleg,Cao Yu,Johnson Wayne,Ren F.
Abstract
The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.
Publisher
The Electrochemical Society
Cited by
2 articles.
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