Quasi-Ballistic Hole Transport in an AlGaN/GaN Nanowire
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Published:2010-04-16
Issue:4
Volume:28
Page:47-52
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Mastro Michael,Kim H.-Y.,Ahn J.,Kim J.,Hite Jennifer,Eddy Charles
Abstract
An AlGaN/GaN nanowire, with an isosceles-triangle cross-section, was designed to create a large negative polarization at the (000-1) facet. The resultant band bending at this interface formed a two-dimensional potential well that accumulated a hole gas. Transistor operation based on the two-dimensional hole gas showed characteristics of quasi-ballistic transport. A small number of elastic scattering sites were evident from quantum interference characteristics in the current-voltage data.
Publisher
The Electrochemical Society
Cited by
2 articles.
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