Environmental Ozone Effect on the Growth of Hemispherical Grained Silicon for ULSI DRAM Stacked Capacitor-Reference-Cited by-同舟云学术

Environmental Ozone Effect on the Growth of Hemispherical Grained Silicon for ULSI DRAM Stacked Capacitor

Published:2001 Issue:8 Volume:148 Page:F170
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Park Young-Kyou,Kim Hyun-Joon,Kim Dong-Won,Park Jung-Ho

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. International Technology Roadmap for Semiconductors, p. 269, International SEMATECH (1999).

2. H. Watanabe, N. Aoto, A. Adachi, T. Ishijima, E. Ikawa, and K. Terada, in Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Japan Society of Applied Physics, p. 873 Aug 22-24, 1990.

3. M. Sakao, N. Kasai, T. Ishijima, E. Ikawa, H. Watanabe, K. Terada, and T. Kikkawa, Tech. Dig. Int. Electron Devices Meet., 655 (1990).

4. H. Watanabe, A. Sakai, T. Tatsumi, and T. Niino, Solid State Technol.,July, 29 (1992).

5. Hemispherical grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor

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