Carrier Concentration and Hall Mobility in Heavily Arsenic‐Diffused Silicon-Reference-Cited by-同舟云学术

Carrier Concentration and Hall Mobility in Heavily Arsenic‐Diffused Silicon

Published:1980-07-01 Issue:7 Volume:127 Page:1650-1652
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Matsumoto Satoru¹²,Niimi Tatsuya¹²,Murota Junichi¹²,Arai Eisuke¹²

Affiliation:

1. Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama, 223, Japan

2. Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, Musashino, Tokyo, 180, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2129969/pdf

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