Author:
Horita Teruhisa,Kishimoto Haruo,Yamaji Katsuhiko,Brito Manuel E.,Yokokawal Harumi
Abstract
The effects of impurities on degradation of stacks were examined for 5 different kinds of stacks. The voltage degradations of stacks were improved from FY2008 and the voltage degradation was as low as 0.5% levels. Low concentration levels of impurities in the stack components were successfully measured by the SIMS technique. For impurity affected degradation, some degradation factors were considered associate with chemical reaction of impurities.
Publisher
The Electrochemical Society
Cited by
2 articles.
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