Porous Silicon Oxide Layer Formation by the Electrochemical Treatment of a Porous Silicon Layer-Reference-Cited by-同舟云学术

Porous Silicon Oxide Layer Formation by the Electrochemical Treatment of a Porous Silicon Layer

Published:1990-09-01 Issue:9 Volume:137 Page:2925-2927
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Yamana M.¹²³⁴,Kashiwazaki N.¹²³⁴,Kinoshita A.¹²³⁴,Nakano T.¹²³⁴,Yamamoto M.¹²³⁴,Walton Clifford W.¹²³⁴

Affiliation:

1. Laboratory of Physics, Tokyo Denki University, Saitama 350‐03, Japan

2. Department of Applied Electronic Engineering, Faculty of Science and Engineering, Tokyo Denki University, Saitama 350‐03, Japan

3. Department of Applied Physics, Faculty of Engineering, Tokyo Denki University, Tokyo 101, Japan

4. Department of Chemical Engineering, University of Nebraska‐Lincoln, Lincoln, Nebraska 68588‐0126

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2087100/pdf

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