Author:
Tomioka Katsuhiro,Fukui Takashi,Motohisa Junichi
Abstract
Tunnel field-effect transistors (TFETs) have been attracting much attention as building-blocks for future low-power integrated circuits. Here we report recent progress in TFETs with surrounding-gate architecture and III-V nanowire/Si heterojunctions. We also discuss guidelines or obtaining steep-slope turn-on behavior in these devices.
Publisher
The Electrochemical Society
Cited by
1 articles.
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