(Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing
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Published:2013-08-31
Issue:9
Volume:58
Page:195-200
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Sakuraba Masao,Murota Junichi
Abstract
Low-energy plasma CVD processing is expected to be effective in application of high-performance group-IV semiconductor heterodevices under suppression of dislocation generation and intermixing, i.e. group IV semiconductor quantum heterointegration on Si large scale integrated circuits. Recent progress in (A) development of room-temperature resonanttunneling diode using group-IV semiconductors and (B) lowenergy plasma CVD processing for group-IV semiconductor quantum heterointegration are reviewed.
Publisher
The Electrochemical Society